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april 2015 docid022133 rev 4 1 / 21 this is information on a product in full production. www.st.com sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 n - channel 1200 v, 0.6 2 typ.,12 a mdmesh k5 power mosfets in h2pak - 2, to - 220, to - 247 and to - 247 long leads datasheet - production data figure 1 : internal schematic diagram features order cod es v ds r ds(on) max. i d p tot sth12n120k5 - 2 1200 v 0.69 12 a 250 w stp12n120k5 STW12N120K5 stwa12n120k5 ? worldwide best fom (figure of merit) ? ultra - low gate charge ? 100% avalanche tested ? zener - protected applications ? switching applications description these very high voltage n - channel power mosfets are desig ned using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on - resistance and ultra - low gate charge for applications requiring superior power density and high efficiency. table 1: device summary order code marking package packing sth12n120k5 - 2 12n120k5 h 2 pak - 2 tape and reel stp12n120k5 to - 220 tube STW12N120K5 to - 247 stwa12n120k5 to - 247 long leads h 2 p ak-2 t o -22 0 1 2 3 t o-247 t o-247 long leads 1 2 3 d(2, t ab) g(1) s(3) ( t o-220, t o-247 and t o-247 long leads) (h p ak-2) 2 d( t ab) g(1) s(2, 3)
contents sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 2 / 21 docid022133 rev 4 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package information ................................ ................................ ..... 10 4.1 h2 pak - 2 package information ................................ ......................... 11 4.2 to - 220 type a package information ................................ ................ 14 4.3 to - 247 package information ................................ ........................... 16 4.4 to - 247 long leads package information ................................ ......... 18 5 revision history ................................ ................................ ............ 20
sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 electrical ratings docid022133 rev 4 3 / 21 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 30 v i d drain current at t c = 25 c 12 a i d drain current at t c = 100 c 7.6 a i dm (1) drain current (pulsed) 48 a p tot total dissipation at t c = 25 c 250 w i ar (2) max current during repetitive or single pulse avalanche 4 a e as (3) single pulse avalanche energy 215 mj dv/dt (4) peak diode recovery voltage slope 4.5 v/ns dv/dt (5) mosfet dv/dt ruggedness 50 v/ns t j t stg operating junction temperature storage temperature - 55 to 150 c notes: (1) pulse width limited by safe operating area. (2) pulse width limited by t jmax. (3) starting t j = 25 c, i d =i as , v dd = 50 v (4) i sd 12 a, di/dt 100 a/s, v peak v (br)dss (5) v ds 960 v table 3: thermal data symbol parameter value unit h 2 pak - 2 to - 220 to - 247 to - 247 long leads r thj - case thermal resistance junction - case max 0.5 c/w r thj - amb thermal resistance junction - amb max 62.5 50 c/w r thj - pcb thermal resistance junction - pcb max 30 c/w
electrical characteristics sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 4 / 21 docid022133 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4: on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v , i d = 1 ma 1200 v i dss zero gate voltage drain current v gs = 0 v , v ds = 1200 v 1 a v gs = 0, v ds = 1200 v, tc = 125 c 50 a i gss gate body leakage current v ds = 0 v , v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 6 a 0.6 2 0.69 table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0 v , v ds = 100 v, f = 1 mhz - 1370 - pf c oss output capacitance - 110 - pf c rss reverse transfer capacitance - 0.6 - pf c o(tr) (1) equivalent capacitance, time - related v gs = 0, v ds = 0 to 960 v - 128 - pf c o(er) (2) equivalent capacitance, energy - related - 42 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 3 - q g total gate charge v dd = 960 v, i d = 12 a v gs = 10 v (see figure 18: "gate charge test circuit" ) - 44.2 - nc q gs gate - source charge - 7.3 - nc q gd gate - drain charge - 30 - nc notes: (1) time - related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss (2) energy - related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss
sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 electrical characteristics docid022133 rev 4 5 / 21 table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 600 v, i d = 6 a, r g = 4.7 , v gs = 10 v (see figure 20: "unclamped inductive load test circuit" ) - 23 - ns t r rise time - 11 - ns t d(off) turn - off delay time - 68.5 - ns t f fall time - 18.5 - ns table 7: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 12 a i sdm source - drain current (pulsed) - 48 a v sd (1) forward on voltage i sd = 12 a, v gs = 0 v - 1.5 v t rr reverse recovery time i sd = 12 a, v dd = 60 v di/dt = 100 a/s, (see figure 19: "test circuit for inductive load switching and diode recovery times" ) - 630 ns q rr reverse recovery charge - 12.6 c i rrm reverse recovery current - 40 a t rr reverse recovery time i sd = 12 a,v dd = 60 v di/dt = 100 a/s, tj = 150 c (see figure 19: "test circuit for inductive load switching and diode recovery times" ) - 892 ns q rr reverse recovery charge - 15.6 c i rrm reverse recovery current - 35 a notes: (1) pulsed: pulse duration = 300s, duty cycle 1.5% table 8: gate - source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate - source breakdown voltage i gs = 1 ma, i d = 0 a 30 - v the built - in back - to - back zener diodes have been specifically designed to enhance the esd capability of the device. the zener voltage is appropriate for efficient and cost - effective intervention to protect the device integrity. these integrated zene r diodes thus eliminate the need for external components.
electrical characteristics sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 6 / 21 docid022133 rev 4 2.1 electrical characteristics (curves) figure 2 : safe operating are a for h 2 pak - 2 and to - 220 figure 3 : thermal impedance for h 2 pak - 2 and to - 220 figure 4 : safe operating area for to - 247 and to - 247 long leads figure 5 : thermal impedance for to - 247 and to - 247 long leads figure 6 : output characteristics figure 7 : transfer characteristics i d 15 5 0 0 5 v ds (v) 10 (a) 15 6v 7v v gs =9, 10v 10 20 8v gipd300320151056m t i d 20 10 0 5 7 v gs (v) 9 (a) 6 8 5 15 v ds =20v gipd300320151057m t i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms 100s 0.01 tj=150c t c=25c single pulse 10ms 100 1000 gipd300320151033m t k t p ? z th = k*r thj-c = t p / ? single pulse 0.01 =0.5 10 -1 10 -2 10 -3 10 -4 10 -5 10 -3 10 -2 10 -1 0.2 0.1 0.05 0.02 t p (s) gc18460 i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms 100s 0.01 tj=150c t c=25c single pulse 10ms 100 1000 gipd300320150945m t k t p ? z th = k*r thj-c = t p / ? single pulse 0.01 =0.5 10 -1 10 -2 10 -4 10 -5 10 -3 10 -2 10 -1 t p (s) 0.2 0.1 0.05 0.02
sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 electrical characteristics docid022133 rev 4 7 / 21 figure 8 : gate charge vs gate - source voltage figure 9 : static drain - source on - resistance figure 10 : capacitance variations figure 11 : output capacitance stored energy figure 12 : normalized gate threshold voltage vs temperature figure 13 : normalized on - resistance vs temperature v gs 6 4 2 0 0 20 q g (nc) (v) 8 30 40 10 v dd =960v i d =12 a 600 400 200 0 800 1000 v ds 10 v ds (v) gipd300320151058m t v gs(th) 1 0.8 0.6 0.4 -75 t j (c) (norm) -25 1.2 25 75 i d =100 a 125 gipd300320151241m t e oss 8 4 0 0 200 v ds (v) (j) 800 400 600 12 1000 16 20 24 gipd300320151232m t c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 cies coes cres 1000 10000 gipd300320151226m t gipd300320151223m t r ds(on) 0.62 0.58 0.54 0 10 i d (a) ( ) 5 15 0.66 v gs =10v 0.7 0.74 0.78 20 1.5 1 0.5 0 t j (c) 2 2.5 r ds(on) (norm) v gs =10v -75 -25 25 75 125 gipd300320151244m t
electrical characteristics sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 8 / 21 docid022133 rev 4 figure 14 : normalized v (br)dss vs temperature figure 15 : source - drain diode forward characteristics figure 16 : maximum avalanche energy vs starting t j e as -75 25 t j (c) (mj) -25 75 125 0 50 100 150 200 i d =12 a v dd =50 v gipd300320151255m t v (br)dss -75 t j (c) (norm) -25 75 25 125 0.84 0.92 1 1.08 i d =1m a gipd300320151249m t v sd 4 i sd (a) (v) 2 10 6 8 0.5 0.6 0.7 0.8 t j =-50c t j =150c t j =25c 0.9 gipd300320151251m t
sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 test circuits docid022133 rev 4 9 / 21 3 test circuits figure 17 : switching times test circuit for resistive load figure 18 : gate charge test circuit figure 19 : test circuit for inductive load switching and diode recovery times figure 20 : unclamp ed inductive load test circuit figure 21 : unclamped inductive waveform figure 22 : switching time waveform am01469v 1 v dd 47 k 1 k 47 k 2.7 k 1 k 12 v v i v gs 2200 f p w i g = const 100 100 nf d.u.t. v g v (br)dss v dd v dd v d i dm i d am01472v 1 am01473v 1 0 v gs 90% v ds t on 90% 10% 90% 10% t d(on) t r t t d(off) t f 10% 0 off am01470v1 a d d.u. t . s b g 25 a a b b r g g f as t diode d s l=100 h f 3.3 1000 f v dd d.u. t .
package information sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 10 / 21 docid022133 rev 4 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? speci fications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 package information docid022133 rev 4 11 / 21 4.1 h2pak - 2 package information figure 23 : h2pak - 2 package outline 8159712_d
package information sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 12 / 21 docid022133 rev 4 table 9: h2pak - 2 mechanical data dim. mm min. typ. max. a 4.30 - 4.80 a1 0.03 0.20 c 1.17 1.37 e 4.98 5.18 e 0.50 0.90 f 0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m 2.6 2.9 r 0.20 0.60 v 0 8
sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 package information docid022133 rev 4 13 / 21 figure 24 : h2pak - 2 recommended footprint 8159712_d
package information sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 14 / 21 docid022133 rev 4 4.2 to - 220 type a package information figure 25 : to - 220 type a package outline
sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 package information docid022133 rev 4 15 / 21 table 10: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
package information sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 16 / 21 docid022133 rev 4 4.3 to - 247 package information figure 26 : to - 247 package outline
sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 package information docid022133 rev 4 17 / 21 table 11: to - 247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
package information sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 18 / 21 docid022133 rev 4 4.4 to - 247 long leads package information figure 27 : to - 247 long leads package outline
sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 package information docid022133 rev 4 19 / 21 table 12: to - 247 long leads mechanical data dim. mm. min. typ. max. a 4.90 5.00 5.10 a1 2.31 2.41 2.51 a2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 d 20.90 21.00 21.10 e 15.70 15.80 15.90 e2 4.90 5.00 5.10 e3 2.40 2.50 2.60 e 5.34 5.44 5.54 l 19.80 19.92 20.10 l1 4.30 p 3.50 3.60 3.70 q 5.60 6.00 s 6.05 6.15 6.25
revision history sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 20 / 21 docid022133 rev 4 5 revision history table 13: document revision history date revision changes 23 - aug - 2011 1 first release. 17 - jan - 2013 2 ? minor text changes ? added: h 2 pak package ? the part number stb12n120k5 has been moved to a separate datasheet ? updated: ? updated: mechanical data for to - 247 package 16 - may - 2014 3 ? the part numbers stfw12n120k5 has been moved to a separate datasheet ? added: to - 247 long leads package ? modified: i ar , e as , dv/dt values in table 2: "absolute maximum ratings" ? modified: the entire typical values in table 5: "dynamic" , table 6: "switching times" and table 7: "source drain diode" ? added: section 2.1: "electrical characteristics (curves)" ? minor text changes 08 - apr - 2015 4 updated title, silhouette and description in cover page. updated table 4: "on/off states" , table 5: "dynamic" , figure 9: "static drain - source on - resistance" and figure 10: "capacitance variations" . minor text change.
sth12n120k5 - 2, stp12n120k5, STW12N120K5, stwa12n120k5 docid022133 rev 4 21 / 21 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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